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DISCRETE SEMICONDUCTORS
DATA SHEET
ndbook, halfpage
M3D087
BCP68 NPN medium power transistor; 20 V, 1 A
Product data sheet Supersedes data of 1999 Apr 08 2003 Nov 25
NXP Semiconductors
Product data sheet
NPN medium power transistor; 20 V, 1 A
FEATURES * High current * Two current gain selections * 1.4 W total power dissipation. APPLICATIONS * Linear voltage regulators * Low side switches * Supply line switch for negative voltages * MOSFET drivers * Audio pre-amplifiers. DESCRIPTION NPN medium power transistor (see "Simplified outline, symbol and pinning") for package details. PRODUCT OVERVIEW PACKAGE TYPE NUMBER PHILIPS BCP68 BCP68-25 SOT223 SOT223 EIAJ SC-73 SC-73 BCP68 BCP68/25 MARKING CODE QUICK REFERENCE DATA SYMBOL VCEO IC ICM hFE PARAMETER collector-emitter voltage collector current (DC) peak collector current DC current gain BCP68 BCP68-25 85 160
BCP68
MIN. MAX. UNIT - - - 20 1 2 375 375 V A A
SIMPLIFIED OUTLINE, SYMBOL AND PINNING PINNING TYPE NUMBER BCP68 SIMPLIFIED OUTLINE AND SYMBOL PIN
handbook, halfpage
DESCRIPTION base collector emitter collector
4
1
2, 4 1 3
2 3 4
1 Top view
2
3
MAM287
RELATED PRODUCTS TYPE NUMBER BCP69 BC868 BC368 DESCRIPTION PNP medium power transistor NPN medium power transistor NPN medium power transistor FEATURE PNP complement SOT89, 20 V SOT54, 20 V
2003 Nov 25
2
NXP Semiconductors
Product data sheet
NPN medium power transistor; 20 V, 1 A
ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BCP68 BCP68-25 - DESCRIPTION plastic surface mounted package; collector pad for good heat transfer; 4 leads
BCP68
VERSION SOT223
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation Tamb 25 C; notes 1 and 2 Tamb 25 C; notes 1 and 3 Tamb 25 C; notes 1 and 4 Tstg Tj Tamb Notes 1. See SOT223 (SC-73) standard mounting conditions. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint for SOT223. 3. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; 1 cm2 collector mounting pad. 4. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; 6 cm2 collector mounting pad. storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector - - - - - - - - - -65 - -65 MIN. MAX. 32 20 5 1 2 200 0.625 1 1.4 +150 150 +150 V V V A A mA W W W C C C UNIT
2003 Nov 25
3
NXP Semiconductors
Product data sheet
NPN medium power transistor; 20 V, 1 A
BCP68
handbook, halfpage
1.6
MDB846
Ptot (W) 1.2
(1)
(2)
0.8
(3)
0.4
0 -60
0
60
120 180 Tamb (C)
(1) 6 cm2 collector mounting pad. (2) 1 cm2 collector mounting pad. (3) Standard PCB footprint.
Fig.1 Power derating curve.
THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS Tamb 25 C; notes 1 and 3 Tamb 25 C; notes 1 and 4 Tamb 25 C; notes 1 and 4 Rth(j-s) Notes 1. See SOT223 (SC-73) standard mounting conditions. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint for SOT223. 3. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; 1 cm2 collector mounting pad. 4. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; 6 cm2 collector mounting pad. thermal resistance from junction to solder point Tamb 25 C VALUE 200 125 89 15 UNIT K/W K/W K/W K/W
2003 Nov 25
4
NXP Semiconductors
Product data sheet
NPN medium power transistor; 20 V, 1 A
BCP68
handbook, full pagewidth
1.20 (4x)
;;;; ;;;;
0.30 4 3.90 4.80 7.65
7.00 3.85 3.60 3.50
solder lands solder resist occupied area solder paste
7.40
;;;;;; ;;;;;;
1 2 3 1.20 (3x) 1.30 (3x) 5.90 6.15
Dimensions in mm.
MSA443
Fig.2 Standard PCB footprint for mounting SOT223 (reflow soldering).
2003 Nov 25
5
NXP Semiconductors
Product data sheet
NPN medium power transistor; 20 V, 1 A
BCP68
handbook, halfpage
32 mm 30 mm
20 mm 40 mm 1.3 mm
2.6 mm 0.5 mm 5 mm 3.96 mm 1.6 mm
MDB845
Dimensions in mm.
Fig.3 6 cm2 collector mounting pad.
CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector-base cut-off current emitter-base cut-off current DC current gain CONDITIONS VCB = 25 V; IE = 0 VCB = 25 V; IE = 0; Tj = 150 C VEB = 5 V; IC = 0 BCP68 VCE = 10 V; IC = 5 mA VCE = 1 V; IC = 500 mA VCE = 1 V; IC = 1 A BCP68-25 VCE = 1 V; IC = 500 mA VCEsat VBE Cc fT collector-emitter saturation voltage IC = 1 A; IB = 100 mA base-emitter voltage collector capacitance transition frequency VCE = 10 V; IC = 5 mA VCE = 1 V; IC = 1 A VCB = 10 V; IE = ie = 0; f = 1 MHz VCE = 5 V; IC = 50 mA; f = 100 MHz 160 - - - - 40 - - - - 22 170 375 500 700 1 - - mV mV V pF MHz 50 85 60 - - - - 375 - MIN. - - - TYP. - - - MAX. UNIT 100 10 100 nA A nA
2003 Nov 25
6
NXP Semiconductors
Product data sheet
NPN medium power transistor; 20 V, 1 A
BCP68
handbook, halfpage
2.4 IC
MDB848
handbook, halfpage (1) (2) (3)
1000
MDB849
(A) 2.0
VBE (mV)
800
1.6
(4) (5)
600
1.2
(6) (7)
400
0.8
(8) (9)
0.4
200
(10)
0 0 1 2 3 4 5 VCE (V)
0 10-1
1
10
102
103 104 IC (mA)
Tamb = 25 C. (1) IB = 10 mA. (2) IB = 9 mA. (3) IB = 8 mA. (4) IB = 7 mA. (5) IB = 6 mA. (6) IB = 5 mA. (7) IB = 4 mA. (8) IB = 3 mA. (9) IB = 2 mA. (10) IB = 1 mA.
VBE/VCE = 1 V.
Fig.4
Collector current as a function of collector-emitter voltage; typical values.
Fig.5
Base-emitter voltage as a function of collector current; typical values.
2003 Nov 25
7
NXP Semiconductors
Product data sheet
NPN medium power transistor; 20 V, 1 A
BCP68
103 handbook, halfpage hFE
MDB850
103 handbook, halfpage VCEsat (mV) 102
MDB851
10
102 10-1
1
10
102
103 104 IC (mA)
1 10-1
1
10
102
103 104 IC (mA)
hFE/VCE = 1 V.
IC/IB = 10.
Fig.6
DC current gain as a function of collector current; typical values.
Fig.7
Collector-emitter saturation voltage as a function of collector current; typical values.
2003 Nov 25
8
NXP Semiconductors
Product data sheet
NPN medium power transistor; 20 V, 1 A
BCP68
102 Rth(j-a) (K/W) 10
mdb847 (1) (2) (3) (4) (5) (6) (7) (8) (9)
P
1
=
tp T
(10)
tp T
t
10-1 10-5
10-4
10-3
10-2
10-1
1
10
102 tp (s)
103
(1) = 1.0. (2) = 0.75.
(3) = 0.5. (4) = 0.33.
(5) = 0.2. (6) = 0.1.
(7) = 0.05. (8) = 0.02.
(9) = 0.01. (10) = 0.0.
Fig.8
Transient thermal resistance from junction to ambient as a function of pulse time for 6 cm2 collector mounting pad.
2003 Nov 25
9
NXP Semiconductors
Product data sheet
NPN medium power transistor; 20 V, 1 A
PACKAGE OUTLINE
BCP68
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
SOT223
D
B
E
A
X
c y HE b1 vMA
4
Q A A1
1
e1 e
2
bp
3
wM B detail X
Lp
0
2 scale
4 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.8 1.5 A1 0.10 0.01 bp 0.80 0.60 b1 3.1 2.9 c 0.32 0.22 D 6.7 6.3 E 3.7 3.3 e 4.6 e1 2.3 HE 7.3 6.7 Lp 1.1 0.7 Q 0.95 0.85 v 0.2 w 0.1 y 0.1
OUTLINE VERSION SOT223
REFERENCES IEC JEDEC EIAJ SC-73
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 99-09-13
2003 Nov 25
10
NXP Semiconductors
Product data sheet
NPN medium power transistor; 20 V, 1 A
DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes 1. Please consult the most recently issued document before initiating or completing a design. PRODUCT STATUS(2) Development Qualification Production DEFINITION
BCP68
This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2003 Nov 25 11 above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
NXP Semiconductors
Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers.
Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com
(c) NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands R75/04/pp12 Date of release: 2003 Nov 25 Document order number: 9397 750 12041

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